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MJE172 MJE182
COMPLEMENTARY SILICON POWER TRANSISTORS
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STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon Epitaxial Planar, complementary transistors in Jedec SOT-32 plastic package. They are designed for low power audio amplifier and low current, high speed switching applications. SOT-32
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2
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INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CEO V CBO V EBO IC I CM IB P tot T stg Tj Collector-Emitter Voltage (I B = 0) Collector-Base Voltage (I E = 0) Base-Emitter Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Total Power Dissipation at T case 25 o C Storage Temperature Total Power Dissipation at T case 25 o C Value MJE182 MJE172 80 100 7 3 6 1 12.5 -65 to 150 150 Unit
V V V A A A W o C o C
For PNP type voltage and current values are negative.
September 2003
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MJE172 - MJE182
THERMAL DATA
R thj-amb R thj-case Thermal Resistance Junction-ambient Thermal Resistance Junction-case Max Max 83.4 10
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CBO I EBO Parameter Collector Cut-off Current (I E = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CB = rated V CBO T case = 150 o C V EB = 7 V I C = 10 mA 80 Min. Typ. Max. 0.1 0.1 0.1 Unit A mA A V
V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) Collector-Emitter Saturation Voltage Base-Emitter on Voltage Base-Emitter on Voltage DC Current Gain
I C = 0.5 A I C = 1.5 A IC = 3 A I C = 1.5 A IC = 3 A I C = 0.5 A I C = 0.1 A I C = 0.5 A I C = 1.5 A I C = 0.1 A f = 10 MHz V CB = 10 V for MJE172 for MJE182 IE = 0
I B = 50 mA I B = 0.15 A I B = 0.6 A I B = 0.15 A I B = 0.6 A V CE = 1 V V CE = 1 V V CE = 1 V V CE = 1 V V CE = 10 V f = 0.1MHz 50 30 12 50
0.3 0.9 1.7 1.5 2 1.2 250
V V V V V
V BE(sat) V BE h FE
fT C CBO
Transistor Frequency Collector-base Capacitance
MHz
60 40
pF pF
Pulsed: Pulse duration = 300s, duty cycle 1.5% For PNP type voltage and current values are negative.
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MJE172 - MJE182
SOT-32 (TO-126) MECHANICAL DATA
mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10o 3 7.4 10.5 0.7 0.40 2.4 1.0 15.4 2.2 4.4 3.8 3.2 2.54 0.084 0.05 0.011 10o 0.118 TYP. MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 0.126 0.100 inch TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630
DIM.
1: Base 2: Collector 3: Emitter
0016114/B
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MJE172 - MJE182
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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